STV80NE03L-06 n - channel 30v - 0.005 w - 80a - powerso-10 stripfet ? mosfet n typical r ds(on) = 0.005 w n exceptional dv/dt capability n 100% avalanche tested n low gate charge 100 o c n application oriented characterization description this power mosfet is the latest development of stmicroelectronics unique "single feature size ? " strip-based process. the resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. applications n high current, high speed switching n solenoid and relay drivers n motor control, audio amplifiers n dc-dc & dc-ac converters n automotive environment (injection, abs, air-bag, lampdrivers, etc. ) internal schematic diagram may 2000 1 10 powerso-10 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain- gate voltage (r gs = 20 k w )30v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 o c80a i d drain current (continuous) at t c = 100 o c60a i dm ( ) drain current (pulsed) 320 a p tot total dissipation at t c = 25 o c150w derating factor 1 w/ o c dv/dt peak diode recovery voltage slope 7 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ) pulse width limited by safe operating area ( 1 ) i sd 80 a, di/dt 300 a/ m s, v dd v (br)dss , t j t jmax type v dss r ds(on) i d STV80NE03L-06 30 v < 0.006 w 80 a 1/8
thermal data r thj-case rthj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 1 62.5 0.5 300 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 80 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 15 v) 600 mj electrical characteristics (t j = - 40 to 150 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 i d = 250 m a v gs = 0 t c =25 o c 27 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating t c =25 o c v ds = max rating 1 50 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a v ds = v gs i d = 250 m a t j =25 o c 0.6 1.7 3.0 2.5 v r ds(on) static drain-source on resistance v gs = 10v i d = 40 a v gs = 5v i d = 40 a v gs = 10v i d = 40 a t j =25 o c v gs = 5v i d = 40 a t j =25 o c 0.005 0.012 0.018 0.006 0.009 w w w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 40 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d =40 a 20 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 6500 1500 500 8700 2000 700 pf pf pf STV80NE03L-06 2/8
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 15 v i d = 40 a r g =4.7 w v gs = 5 v (see test circuit, figure 3) 40 260 55 350 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 24 v i d = 80 a v gs = 5 v 95 30 44 130 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 24 v i d = 80 a r g =4.7 w v gs = 5 v (see test circuit, figure 5) 70 165 250 95 220 340 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 80 320 a a v sd ( * ) forward on voltage i sd = 80 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a di/dt = 100 a/ m s v dd = 15 v t j = 150 o c (see test circuit, figure 5) 75 0.14 4 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area safe operating area for thermal impedance STV80NE03L-06 3/8
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations STV80NE03L-06 4/8
normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature STV80NE03L-06 5/8
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times STV80NE03L-06 6/8
dim. mm inch min. typ. max. min. typ. max. a 3.35 3.65 0.132 0.144 a1 0.00 0.10 0.000 0.004 b 0.40 0.60 0.016 0.024 c 0.35 0.55 0.013 0.022 d 9.40 9.60 0.370 0.378 d1 7.40 7.60 0.291 0.300 e 9.30 9.50 0.366 0.374 e1 7.20 7.40 0.283 0.291 e2 7.20 7.60 0.283 0.300 e3 6.10 6.35 0.240 0.250 e4 5.90 6.10 0.232 0.240 e1.27 0.050 f 1.25 1.35 0.049 0.053 h 13.80 14.40 0.543 0.567 h0.50 0.002 l 1.20 1.80 0.047 0.071 q1.70 0.067 a 0 o 8 o detail "a" plane seating a l a1 f a1 h a d d1 = = = = = = e4 0.10 a e1 e3 c q a = = b b detail "a" seating plane = = = = e2 6 10 5 1 e b he m 0.25 = = = = 0068039-c powerso-10 mechanical data STV80NE03L-06 7/8
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com STV80NE03L-06 8/8
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